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dram module KMM53216000BK/bkg KMM53216000BK/bkg fast page mode 16m x 32 dram simm using 16mx4, 4k refresh, 5v the samsung kmm53216000b is a 16mx32bits dynamic ram high density memory module. the samsung kmm53216000b consists of eight cmos 16mx4bits drams in soj packages mounted on a 72-pin glass-epoxy substrate. a 0.1 or 0.22uf decoupling capacitor is mounted on the printed circuit board for each dram. the kmm53216000b is a single in-line memory module with edge connections and is intended for mounting into 72 pin edge connector sockets. ? part identification - KMM53216000BK(4k cycles/64ms ref, soj, solder) - KMM53216000BKg(4k cycles/64ms ref, soj, gold) ? fast page mode operation ? cas -before- ras & hidden refresh capability ? ras -only refresh capability ? ttl compatible inputs and outputs ? single +5v 10% power supply ? jedec standard pdpin & pinout ? pcb : height(1250mil), double sided component general description features performance range speed t rac t cac t rc t pc -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns pin names pin name function a0 - a11 address inputs dq0-7, dq9-16 dq18-25, dq27-34 data in/out w read/write enable ras0 , ras2 row address strobe cas0 - cas3 column address strobe pd1 -pd4 presence detect vcc power(+5v) vss ground nc no connection presence detect pins (optional) pin 50ns 60ns pd1 pd2 pd3 pd4 vss nc vss vss vss nc nc nc pin configurations pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 symbol v ss dq0 dq18 dq1 dq19 dq2 dq20 dq3 dq21 vcc nc a0 a1 a2 a3 a4 a5 a6 a10 dq4 dq22 dq5 dq23 dq6 dq24 dq7 dq25 a7 a11 vcc a8 a9 nc ras2 nc nc pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 symbol nc nc vss cas0 cas2 cas3 cas1 ras0 nc nc w nc dq9 dq27 dq10 dq28 dq11 dq29 dq12 dq30 dq13 dq31 vcc dq32 dq14 dq33 dq15 dq34 dq16 nc pd1 pd2 pd3 pd4 nc vss samsung electronics co., ltd. reserves the right to change products and specifications without notice.
dram module KMM53216000BK/bkg functional block diagram cas ras oe dq1 dq2 dq3 dq4 w a0-a11 cas0 ras0 u0 vcc vss 0.1 or 0.22uf capacitor for each dram cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u1 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u2 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u3 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u4 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u5 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u6 cas ras oe dq1 dq2 dq3 dq4 w a0-a11 u7 to all drams cas1 cas2 ras2 cas3 w a0-a11 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 dq9 dq10 dq11 dq12 dq13 dq14 dq15 dq16 dq18 dq19 dq20 dq21 dq22 dq23 dq24 dq25 dq27 dq28 dq29 dq30 dq31 dq32 dq33 dq34
dram module KMM53216000BK/bkg i cc1 , i cc3 , i cc4 and i cc6 are dependent on output loading and cycle rates. specified values are obtained with the output open. i cc is specified as an average current. in i cc1 and i cc3 , address can be changed maximum once while ras =v il . in i cc4 , address can be changed maximum once within one fast page mode cycle time, t pc . * note : absolute maximum ratings * * permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. exposure to absolute maximum rating conditions for in tended periods may affect device reliability. item symbol rating unit voltage on any pin relative to v ss voltage on v cc supply relative to v ss storage temperature power dissipation short circuit output current v in , v out v cc t stg p d i os -1 to +7.0 -1 to +7.0 -55 to +125 8 50 v v c w ma recommended operating conditions (voltage referenced to v ss , t a = 0 to 70 c) *1 : v cc +2.0v at pulse width 20ns, which is measured at v cc . *2 : -2.0v at pulse width 20ns, which is measured at v ss . item symbol min typ max unit supply voltage ground input high voltage input low voltage v cc v ss v ih v il 4.5 0 2.4 -1.0 *2 5.0 0 - - 5.5 0 v cc *1 0.8 v v v v dc and operating characteristics (recommended operating conditions unless otherwise noted) i cc1 i cc2 i cc3 i cc4 i cc5 i cc6 i( il) i( ol) v oh v ol symbol speed KMM53216000BK/bkg unit min max i cc1 -5 -6 - - 960 880 ma ma i cc2 don t care - 16 ma i cc3 -5 -6 - - 960 880 ma ma i cc4 -5 -6 - - 560 480 ma ma i cc5 don t care - 8 ma i cc6 -5 -6 - - 960 880 ma ma i i(l) i o(l) don t care -10 -5 10 5 ua ua v oh v ol don t care 2.4 - - 0.4 v v : operating current * ( ras , cas , address cycling @ t rc =min) : standby current ( ras = cas = w =v ih ) : ras only refresh current * ( cas =v ih , ras cycling @ t rc =min) : fast page mode current * ( ras =v il , cas cycling : t pc =min) : standby current ( ras = cas = w =vcc-0.2v) : cas -before- ras refresh current * ( ras and cas cycling @ t rc =min) : input leakage current (any input 0 v in vcc+0.5v, all other pins not under test=0 v) : output leakage current(data out is disabled, 0v v out vcc) : output high voltage level (i oh = -5ma) : output low voltage level (i ol = 4.2ma)
dram module KMM53216000BK/bkg capacitance (t a = 25 c, v cc =5v, f = 1mhz) item symbol min max unit input capacitance[a0-a11] input capacitance[ w ] input capacitance[ ras0 , ras2 ] input capacitance[ cas0 - cas3 ] input/output capacitance[dq0-7, 9-16,18-25, 27-34] c in1 c in2 c in3 c in4 c dq - - - - - 50 66 38 24 17 pf pf pf pf pf test condition : v ih /v il =2.4/0.8v, v oh /v ol =2.4/0.4v, output loading cl=100pf parameter symbol -5 -6 unit note min max min max random read or write cycle time t rc 90 110 ns access time from ras t rac 50 60 ns 3,4,10 access time from cas t cac 13 15 ns 3,4,5 access time from column address t aa 25 30 ns 3,10 cas to output in low-z t clz 0 0 ns 3 output buffer turn-off delay t off 0 13 0 15 ns 6 transition time(rise and fall) t t 1 50 1 50 ns 2 ras precharge time t rp 30 40 ns ras pulse width t ras 50 10k 60 10k ns ras hold time t rsh 13 15 ns cas hold time t csh 50 60 ns cas pulse width t cas 13 10k 15 10k ns ras to cas delay time t rcd 20 37 20 45 ns 4 ras to column address delay time t rad 15 25 15 30 ns 10 cas to ras precharge time t crp 5 5 ns row address set-up time t asr 0 0 ns row address hold time t rah 10 10 ns column address set-up time t asc 0 0 ns column address hold time t cah 10 10 ns column address to ras lead time t ral 25 30 ns read command set-up time t rcs 0 0 ns read command hold referenced to cas t rch 0 0 ns 8 read command hold referenced to ras t rrh 0 0 ns 8 write command hold time t wch 10 10 ns write command pulse width t wp 10 10 ns write command to ras lead time t rwl 15 15 ns write command to cas lead time t cwl 13 15 ns data set-up time t ds 0 0 ns 9 data hold time t dh 10 10 ns 9 refresh period t ref 64 64 ms write command set-up time t wcs 0 0 ns 7 cas setup time( cas -before- ras refresh) t csr 5 5 ns cas hold time( cas -before- ras refresh) t chr 10 10 ns ras to cas precharge time t rpc 5 5 ns access time from cas precharge t cpa 30 35 ns 3 ac characteristics (0 c t a 70 c, v cc =5.0v 10%. see notes 1,2.)
dram module KMM53216000BK/bkg notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles before proper device operation is achieved. input voltage levels are v ih /v il . v ih (min) and v il (max) are ref- erence levels for measuring timing of input signals. transi- tion times are measured between v ih (min) and v il (max) and are assumed to be 5ns for all inputs. measured with a load equivalent to 2 ttl loads and 100pf. operation within the t rcd (max) limit insures that t rac (max) can be met. t rcd (max) is specified as a reference point only. if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . assumes that t rcd 3 t rcd (max). this parameter defines the time at which the output achieves the open circuit condition and is not referenced to v oh or v ol . t wcs is non-restrictive operating parameter. it is included in the data sheet as electrical characteristic s only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. either t rch or t rrh must be satisfied for a read cycle. these parameters are referenced to the cas leading edge in early write cycles. operation within the t rad (max) limit insures that t rac (max) can be met. t rad (max) is specified as reference point only. if t rad is greater than the specified t rad (max) limit, then access time is controlled by t aa . 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. test condition : v ih /v il =2.4/0.8v, v oh /v ol =2.4/0.4v, output loading cl=100pf parameter symbol -5 -6 unit note min max min max fast page mode cycle time t pc 35 40 ns cas precharge time(fast page cycle) t cp 10 10 ns ras pulse width(fast page cycle) t rasp 50 200k 60 200k ns w to ras precharge time(c-b-r refresh) t wrp 10 10 ns w to ras hold time(c-b-r refresh) t wrh 10 10 ns ac characteristics (0 c t a 70 c, v cc =5.0v 10%. see notes 1,2.)
dram module KMM53216000BK/bkg t crp ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq read cycle column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t aa t oea t cac t clz t rac open data-out t oez t rrh t rch don t care undefined t rcs t off
dram module KMM53216000BK/bkg t wcs write cycle ( early write ) note : d out = open ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - dq column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp t wp t ds t dh t wch t cwl t rwl don t care data-in undefined
dram module KMM53216000BK/bkg t oed ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - dq column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp data-in t wp don t care write cycle ( oe controlled write ) note : d out = open t cwl t rwl t ds t dh t oeh undefined
dram module KMM53216000BK/bkg ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq row addr t ras t rwc t rp t rsh t rcd t cas t csh t rad t asr t rah t asc t cah t crp valid t wp don t care read - modify - wrtie cycle t rwl t cwl t oez t oea t oed t awd t cwd t rwd data-out undefined valid data-in t rac t aa t cac t clz t ds t dh column address
dram module KMM53216000BK/bkg t rch t oez t clz ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq column address row addr t rhcp t rasp t cas t asc t rad t asr t rah t asc t cah t crp valid don t care fast page read cycle t oez t rrh data-out undefined valid data-out note : d out = open column address column address t rsh t cas t rcd t pc ? t csh t cah t asc t cah ? ? ? t rch ? t rcs t rcs t rcs t oea t cac t oea t cac t oea t cac valid data-out t clz t off t aa t off t aa t clz t off t oez t rac t aa ? ? t cp t cas t rp t cp
dram module KMM53216000BK/bkg t asc t cah ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - dq column address row addr t rhcp t rasp t cas t rad t asr t rah t asc t crp valid don t care fast page write cycle ( early write ) data-in undefined valid data-in t ds note : d out = open column address column address t rsh t cas t rcd t pc ? t csh t cah t asc t cah ? ? ? t wcs t wch t wcs valid data-in ? ? t wp t cwl t wp t wch t wp t wcs t wch t cwl t rwl t cwl t dh t ds t dh t ds t dh ? ? ? t rp t cp t cp t cas t pc
dram module KMM53216000BK/bkg t cac t asc t asc ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq row addr t csh t rasp t asr valid don t care fast page read - modify - write cycle data-out undefined t rcd t cp t rad t cah t wp t dh col. addr col. addr t cas t cas t crp t cah t ral t prwc t rcs t cwl t cwd t awd t rwd t wp t cwd t awd t cwl t aa t rac t oea t clz t cac t oez t cpwd t oed valid data-in valid data-out valid data-in t clz t ds t oea t aa t dh t ds t oez t oed t rwl t rp t rsh t rah
dram module KMM53216000BK/bkg ras v ih - v il - cas v ih - v il - a v ih - v il - row addr t ras t rc t rp t asr t rah t crp don t care ras - only refresh cycle undefined note : w , oe , d in = don t care d out = open t rpc t crp cas - before - ras refresh cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t ras t rc t rp t wrp t rpc t rp t cp t chr t csr w v ih - v il - t wrh t off t rpc v oh - v ol - dq open
dram module KMM53216000BK/bkg t wrh t off ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq hidden refresh cycle ( read ) column address row address t ras t rc t chr t rcd t rad t asr t rah t asc t cah t crp t rcs t aa t oea t cac t clz t rac open t rrh don t care t rsh t oez t wrp undefined t rc data-out t rp t rp t ras
dram module KMM53216000BK/bkg ras v ih - v il - cas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v ih - v il - dq hidden refresh cycle ( write ) column address row address t ras t rc t chr t rcd t rad t asr t rah t asc t cah t crp don t care t rsh data-in t wrp t wrh undefined t rc note : d out = open t wch t wp t dh t rp t rp t ras t ds t wcs
dram module KMM53216000BK/bkg cas -before- ras refresh counter test cycle ras v ih - v il - cas v ih - v il - a v ih - v il - column address t ras t rsh t chr t ral t csr t cpt t rp t cas t asc t cah read cycle v oh - v ol - data-out dq t off t clz write cycle v ih - v il - data-in dq t dh t ds w v ih - v il - t wp t cwd t cwl t rwl read-modify-write t awd v ih - v il - oe t oea t aa t cac t ds t dh valid data-out v i/oh - v i/ol - dq don t care undefined v ih - v il - oe t oea t oez oe v ih - v il - t rcs t clz t oez t oed t wrp t wrh t rrh t rch t rcs t cac t aa v ih - v il - w t wrp t wrh t wcs t wch t cwl v ih - v il - w t wp t rwl t wrp t wrh valid data-in note : this timing diagram is applied to all devices besides 16m dram 4th & 64m dram.
dram module KMM53216000BK/bkg don t care undefined cas - before - ras self refresh cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t rass t rps t rpc t wrp t chs t rp t cp t csr w v ih - v il - t wrh t off t rpc open v oh - v ol - dq test mode in cycle note : oe , a = don t care ras v ih - v il - cas v ih - v il - t ras t rc t rp t rpc t wts t rpc t rp t cp t chr t csr w v ih - v il - t wth t off open v oh - v ol - dq
dram module KMM53216000BK/bkg package dimensions .133(3.38) 4.250(107.95) 3.984(101.19) .125(3.17) r.062 .004(r1.57 .10) .250 (6.35) 3.750(95.25) .250(6.35) units : inches (millimeters) gold/solder plating lead .010(.25)max .050(1.27) .041 .004(1.04 .10) .100(2.54) min .350(8.89) max .054 (1.37) tolerances : .005(.13) unless otherwise specified note : the used device is 16mx4 dram, soj dram part no. : KMM53216000BK/bkg -- km44c16100bk 1.250(31.75) min .400(10.16) .125 dia .002(3.18 .051) r.062(1.57) .250(6.35) .080(2.03) .047(1.19) ( back view ) ( front view )

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